Method for Producing a Nitride Compound Semiconductor Component

ABSTRACT

A method for producing a nitride compound semiconductor component is disclosed. In an embodiment the method includes providing a growth substrate, growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate, growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.

This patent application is a national phase filing under section 371 ofPCT/EP2019/051154, filed Jan. 17, 2019, which claims the priority ofGerman patent application 102018101558.5, filed Jan. 24, 2018, each ofwhich is incorporated herein by reference in its entirety.

TECHNICAL FIELD

The invention relates to a method of producing a nitride compoundsemiconductor component.

BACKGROUND

Nitride compound semiconductors are frequently used in LEDs or laserdiodes that generally emit in the blue spectral region. Depending on thecomposition of the semiconductor material, for example, emission in theultraviolet or green spectral region is also possible. By luminescenceconversion by means of luminophores, it is possible to convert theshortwave radiation to longer wavelengths. In this way, it is possibleto generate mixed-color light, especially white light. LEDs based onnitride compound semiconductors are therefore of considerable importancefor LED lighting systems. Nitride compound semiconductors can also beused in electronic semiconductor components outside optoelectronics, forexample, in a high electron mobility transistor (HEMT).

In the production of semiconductor components, the nitride compoundsemiconductor layers are generally grown epitaxially onto a growthsubstrate matched to the lattice constant and crystal structure of thenitride compound semiconductor material. Suitable substrate materialsare especially sapphire, GaN or SiC. However, these substrate materialsare comparatively costly.

The growth of nitride compound semiconductors onto comparatively costlysilicon substrates is made more difficult by a comparatively largedifferential in the coefficients of thermal expansion of silicon and ofthe nitride compound semiconductor material. More particularly, in thecourse of cooling of the layer system from the growth temperature ofmore than 1000° C. used for growth of nitride compound semiconductors toroom temperature, large tensile stresses are generated in the GaN.

German Patent Application No. DE 10 2006 008 929 A1 and InternationalPatent Application No. WO 2011/039181 A1 each describe methods ofproducing nitride compound semiconductor components on siliconsubstrates. These publications disclose incorporation of a layerstructure for generating a compressive stress between the siliconsurface of the growth substrate and the functional layer sequence of theoptoelectronic component, which counteracts the tensile stress generatedby the silicon in the course of cooling.

German Patent Application No. DE 10 2011 114 665 A1 describes a processfor producing a nitride compound semiconductor component, in which atension layer structure for generating a compressive stress and afunctional semiconductor layer sequence are grown on. The tension layerstructure comprises a first GaN semiconductor layer and a second GaNsemiconductor layer, wherein a masking layer is embedded in the firstGaN semiconductor layer, and wherein an Al(Ga)N interlayer forgenerating a compressive stress is disposed between the first GaNsemiconductor layer and the second GaN semiconductor layer.

One problem addressed is that of specifying a further-improved method ofproducing a nitride compound semiconductor component that can achieve acompressive stress and a low defect density coupled with low productioncomplexity.

SUMMARY OF THE INVENTION

Embodiments provide a method of producing a nitride compoundsemiconductor component.

In at least one embodiment of the method, a growth substrate is firstprovided. The growth substrate may especially be a silicon substrate oran SOI (silicon on insulator) substrate. The method is advantageouslyalso applicable to other substrate materials that especially havesimilar thermal expansion characteristics to silicon.

In at least one embodiment, in the method, a nucleation layer includingan aluminum-containing nitride compound semiconductor is grown onto thegrowth substrate. The nucleation layer may especially contain or consistof AIN. But it is not ruled out that the nucleation layer also includesfurther constituents, for example, a dopant and/or small amounts offurther group III materials, for example In or Ga.

The nucleation layer may be grown on in multiple component layers thatdiffer in their composition and/or their growth parameters, for example,the growth temperature or the growth rate.

In a subsequent method step, a tension layer structure for generating acompressive stress is grown on top of the nucleation layer. The tensionlayer structure especially has a first GaN semiconductor layer and asecond GaN semiconductor layer. The second GaN semiconductor layerfollows the first GaN semiconductor layer in growth direction of thetension layer structure. What is meant here and hereinafter by a GaNsemiconductor layer is a semiconductor layer comprising essentially GaN.This does not mean that the GaN semiconductor layer does not containsmall amounts of a further group III material, especially In or Al,and/or a dopant.

There is advantageously an Al(Ga)N interlayer disposed between the firstGaN semiconductor layer and the second GaN semiconductor layer. Theinterlayer preferably contains a very high proportion of Al or consistsof AIN. But it is not ruled out that the interlayer contains smallamounts of gallium and/or a dopant. By virtue of the Al-containingnitride semiconductor material of the interlayer having a smallerlattice constant than GaN, a compressive stress is generated in thesubsequent second GaN semiconductor layer. There is advantageouslyalready a compressive stress in the first GaN semiconductor layer as aresult of the growth on the aluminum-containing nucleation layer,especially an AIN nucleation layer. However, such a compressive stresscan be reduced again during the growth of the first GaN semiconductorlayer, for example, via the development of dislocations. What isachieved by the insertion of the Al(Ga)N interlayer between the firstGaN semiconductor layer and the second GaN semiconductor layer is that asufficiently large compressive stress is built up in the second GaNsemiconductor layer as well, which counteracts any tensile stressgenerated by the substrate in the course of cooling of the layer systemfrom the growth temperature to room temperature.

In a further method step, the functional semiconductor layer sequence ofthe nitride compound semiconductor component is grown onto the tensionlayer structure. The functional semiconductor layer sequence may be thesemiconductor layer sequence of an electronic or optoelectroniccomponent. The functional semiconductor layer sequence may, in the caseof an optoelectronic component, especially contain an active layer ofthe optoelectronic component. The active layer may, for example, be aradiation-emitting or radiation-receiving layer. In addition to theactive layer, the functional semiconductor layer sequence may have, forexample, an n-type semiconductor region and a p-type semiconductorregion which surround the active layer.

The functional semiconductor layer sequence of the semiconductorcomponent is especially based on a nitride compound semiconductor. Whatis meant by “based on a nitride compound semiconductor” in the presentcontext is that the semiconductor layer sequence or at least one layerthereof comprises a III nitride compound semiconductor material,preferably In_(x)Al_(y)Ga_(1-x-y)N where 0≤x≤1, 0≤y≤1 and x+y≤1. Thismaterial need not necessarily have a mathematically exact composition asper the above formula. Instead, it may include one or more dopants andadditional constituents that essentially do not alter the characteristicphysical properties of the In_(x)Al_(y)Ga_(1-x-y)N material. For thesake of simplicity, however, the above formula includes only theessential constituents of the crystal lattice (In, Al, Ga, N), althoughthese may be replaced in part by small amounts of further substances.

In at least one embodiment of the method, a 3D AlGaN layer is grown ontop of the Al(Ga)N interlayer before the second GaN semiconductor layeris grown on. What is meant here and hereinafter by a “3D AlGaN layer” isa layer that consists wholly or essentially of AlGaN and ischaracterized by three-dimensional growth. The 3D AlGaN layer isespecially grown on in such a way that it includes nonplanar structures.In the course of growth of the 3D AlGaN layer, the growth conditions,especially the growth temperature, the pressure and/or the gas flowrates, are adjusted in such a way as to effect predominantlythree-dimensional growth.

Predominantly three-dimensional growth means more particularly that thesurface of the 3D AlGaN layer is formed essentially by crystal facesthat do not run parallel to the growth substrate. More particularly, thecrystal faces of the 3D AlGaN layer are predominantly not oriented inthe c plane. The c plane corresponds more particularly to a [0001]crystal surface of the AlGaN material. The growth of the 3D AlGaN layerin the [0001] crystal direction is preferably negligibly small. Owing tothe growth conditions, the 3D AlGaN layer forms nonplanarthree-dimensional structures, especially pyramidal structures.

It has been found that the arrangement of the 3D AlGaN layer atop theAl(Ga)N interlayer which serves to build up a compressive stress canreduce the dislocation density. It has been found that the Al(Ga)Ninterlayer advantageously brings about compressive stress in the secondGaN layer grown on subsequently, but that, on the other hand, newdislocations also proceed from the Al(Ga)N interlayer. The methoddescribed herein makes particular use of the idea that the arrangementof the 3D AlGaN layer atop the Al(Ga)N interlayer can reduce thesedislocations without too greatly impairing the compressive stress.

In at least one embodiment, the 3D AlGaN layer is produced by means ofmetal-organic vapor phase epitaxy (MOVPE). It is especially possible toproduce the entire tension layer structure and the functionalsemiconductor layer sequence of the nitride compound semiconductorcomponent by means of metal-organic vapor phase epitaxy. The nonplanarstructures of the 3D AlGaN layer can especially be generated by reducingthe growth temperature in the growing of the 3D AlGaN layer bycomparison with the further semiconductor layers. Two-dimensionalnitride compound semiconductor layers are produced, for example, at agrowth temperature of 1050° C. or more. The 3D AlGaN layer is preferablyproduced at a growth temperature of less than 1050° C. Preferably, thegrowth temperature in the growth of the 3D AlGaN layer is less than1000° C.

In at least one embodiment of the method, the 3D AlGaN layer, the firstGaN semiconductor layer and the second GaN semiconductor layer areproduced by means of metal-organic vapor phase epitaxy, using NH₃ asreaction gas. Preferably, an NH₃ gas flow rate in the production of the3D AlGaN layer is at least 50% smaller than in the production of thefirst GaN semiconductor layer and/or the second GaN semiconductor layer.

In at least one embodiment of the method, the 3D AlGaN layer, the firstGaN semiconductor layer and the second GaN semiconductor layer areproduced by means of metal-organic vapor phase epitaxy in a reactionchamber, wherein the pressure in the reaction chamber in the productionof the 3D AlGaN layer is smaller than in the production of the first GaNsemiconductor layer and/or the second GaN semiconductor layer.

The three-dimensional growth of the 3D AlGaN layer, in oneconfiguration, may be promoted by the different lattice constant fromthe underlying semiconductor layer. The difference in the latticeconstants promotes what is called Stranski-Krastanov growth, meaningthat a three-dimensional layer is obtained. Three-dimensional growth mayalso be promoted by at least one of the following growth parameters:high temperature, high Si doping, low NH₃ flow rate, high H₂/N₂ factorin the reactor.

In at least one embodiment of the method, the tension layer structuredoes not have a masking layer. More particularly, by comparison with theprior art from publication DE 10 2011 114 665 A1 mentioned in theintroduction, it is possible to dispense with the silicon nitridemasking layer and the GaN semiconductor layer disposed directly thereon.The production complexity for application and structuring of the maskinglayer can therefore advantageously be dispensed with. Instead, thedislocation density is reduced in the method by means of the 3D AlGaNlayer. The 3D AlGaN layer thus has the particular advantage that nomasking layer has to be incorporated into the tension layer structurefor reduction of the dislocation density.

In at least one embodiment of the method, the tension layer structuredoes not include any silicon nitride. More particularly, it is possibleto dispense with a silicon nitride masking layer. It is additionallyadvantageous that, by comparison with the prior art cited, it ispossible to dispense with the GaN semiconductor layer disposed betweenthe masking layer and the Al(Ga)N interlayer. It has been found that theGaN semiconductor layer can have a disadvantageous tensile stress on themasking layer.

In at least one embodiment of the method, the growth of the nucleationlayer is followed and the growth of the first GaN layer is preceded bygrowth of a second 3D AlGaN layer in such a way that it has nonplanarstructures. The second 3D AlGaN layer can be produced analogously to theabove-described 3D AlGaN layer which is grown on the Al(Ga)N interlayer.The second 3D AlGaN layer has the particular advantage that thedislocation density is reduced even directly above the nucleation layer.This has the particular advantage that even the first GaN semiconductorlayer has a reduced dislocation density. In addition, even the first GaNsemiconductor layer may be compressively stressed and hence contributeto the overall compressive stress in the tension layer structure.

In at least one embodiment of the method, the nucleation layer isproduced by sputtering. Sputtering advantageously enables deposition ofthe nucleation layer on the growth substrate in a relaxed manner. It hasbeen found that the nucleation layer has column-shaped growth in thecase of production by sputtering. This can be detected, for example,with the aid of atomic force microscopy or transmission electronmicroscopy. In the case of the column-shaped growth of the nucleationlayer produced by means of sputtering, grain boundaries that contributeto defect reduction are advantageously formed.

In at least one embodiment of the method, the total thickness of thetension layer structure is less than 5 μm. A low total thickness of thetension layer structure of preferably less than 5 μm is especiallyachieved by dispensing with a masking layer and a GaN semiconductorlayer disposed between the masking layer and the Al(Ga)N interlayer. Thecomplexity of production is thus advantageously reduced.

In at least one embodiment of the method, the growth substrate has asilicon surface. The growth substrate may especially be a siliconsubstrate. The growth substrate may alternatively also be an SOI(silicon on insulator) substrate.

In at least one embodiment of the method, the silicon surface of thegrowth substrate is a (111) plane. The (111) plane of a silicon crystalhas particularly good suitability for growth of a hexagonal nitridecompound semiconductor material owing to the hexagonal crystalstructure.

In at least one embodiment of the method, the nitride compoundsemiconductor component is an optoelectronic component. The nitridecompound semiconductor component may especially be a radiation-emittingoptoelectronic component, for example an LED.

In at least one embodiment of the method, the functional semiconductorlayer sequence is a light-emitting diode layer sequence comprising ann-type semiconductor region, a p-type semiconductor region, and anactive layer disposed between the n-type semiconductor region and thep-type semiconductor region.

In a preferred configuration of the method, the growth substrate isdetached after the growth of the functional semiconductor layersequence. In this configuration, the functional semiconductor layersequence is advantageously bonded to a carrier substrate on an oppositesurface from the growth substrate. Since the carrier substrate need notbe suitable for growth of a nitride compound semiconductor material, itmay advantageously be selected using other criteria, especially a goodthermal and/or electrical conductivity. In addition, in thisconfiguration, the bonding of the functional semiconductor layersequence to the carrier substrate may be preceded by application of amirror layer to the functional semiconductor layer sequence, in order toreflect the radiation emitted in the direction of the carrier substratein the operation of the nitride compound semiconductor component towarda radiation exit surface opposite the carrier substrate.

After the detachment of the growth substrate, the nucleation layer andthe tension layer structure may be at least partly removed, for example,by an etching method. In this case, any residue of the tension layerstructure that remains in the optoelectronic component is disposed onthe radiation exit side of the optoelectronic component.

BRIEF DESCRIPTION OF THE DRAWINGS

The invention is elucidated in detail hereinafter by working examples inassociation with FIGS. 1 to 4.

FIG. 1 shows a schematic diagram of a cross section through thesemiconductor layer sequence in a working example of the method ofproducing a nitride compound semiconductor component;

FIG. 2 shows a schematic diagram of a cross section through thesemiconductor layer sequence in a second working example of the methodof producing a nitride compound semiconductor component;

FIG. 3 shows a schematic diagram of a cross section through thesemiconductor layer sequence in a third working example of the method ofproducing a nitride compound semiconductor component; and

FIG. 4 shows schematic diagram of a cross section through thesemiconductor layer sequence in a fourth working example of the methodof producing a nitride compound semiconductor component.

DETAILED DESCRIPTION OF ILLUSTRATIVE EMBODIMENTS

Constituents that are the same or have the same effect are each giventhe same reference numerals in the figures. The constituents shown andthe size ratios of the constituents relative to one another should notbe considered to be true to scale.

In the method, as shown in FIG. 1, a semiconductor layer sequence of thenitride compound semiconductor component is produced on a growthsubstrate 1. The growth substrate 1 preferably has a silicon surface.The growth substrate 1 may, for example, be a silicon wafer.Alternatively, however, it is also possible that the growth substrate 1is an SOI substrate. The silicon surface of the growth substrate 1 ispreferably a (111) crystal plane which, owing to its hexagonal symmetry,has particularly good suitability for growth of nitride compoundsemiconductors. The growth substrate 1 with the silicon surface has theadvantage of being comparatively inexpensive by comparison withsubstrates of sapphire, GaN or SiC that are generally used for growth ofnitride compound semiconductor materials.

In the method, a nucleation layer 2 of an aluminum-containing nitridecompound semiconductor material is first grown onto the surface of thegrowth substrate 1. The nucleation layer 2 preferably contains orconsists of AIN. The nucleation layer 2 preferably has a thicknessbetween 100 nm and 300 nm, for example about 200 nm. The nucleationlayer 2 may be grown on in multiple component layers (not shown) thatdiffer in their composition and/or their growth parameters, for example,the growth temperature or the growth rate.

In a further step of the method, a first GaN semiconductor layer 4 isgrown onto the nucleation layer 2. The first GaN semiconductor layer 4may have a multitude of dislocations 15 owing to the lattice mismatchwith the growth substrate 1.

Subsequently, an interlayer 5 of AIN or AlGaN is grown on. The Al(Ga)Ninterlayer 5, owing to its aluminum content, has a smaller latticeconstant than GaN. The Al(Ga)N interlayer 5 is therefore suitable forgenerating a compressive stress in a second GaN semiconductor layergrown on subsequently. The higher the aluminum content in the Al(Ga)Ninterlayer 5, the greater this effect. Preferably, the interlayer 5 istherefore free of gallium and advantageously consists of AlN.

Subsequently, a 3D AlGaN layer 6 is grown onto the Al(Ga)N interlayer 5.The 3D AlGaN layer 6 features three-dimensional growth; moreparticularly, the 3D AlGaN layer 6 is grown on in such a way that it hasnonplanar structures.

The essentially three-dimensional growth of the 3D AlGaN layer 6 isespecially enabled by a suitable choice of the growth conditions.Preferably, the 3D AlGaN layer 6, like the entire tension layerstructure 10, is produced by means of metal-organic vapor phase epitaxy(MOVPE). For achievement of three-dimensional growth, in the depositionof the 3D AlGaN layer 6, it is possible, for example, to reduce thegrowth temperature. Conventional planar nitride compound semiconductorlayers can be produced, for example, at a growth temperature of morethan 1050° C. The 3D AlGaN layer 6 is preferably produced at a growthtemperature lower than 1050° C., for example, at a growth temperature of1000° C. or less. An alternative and/or additional option forachievement of three-dimensional growth is to vary, especially toreduce, the pressure in the reaction chamber in the course of productionof the 3D AlGaN layer 6 by comparison with the pressure in theproduction of the other semiconductor layers. Yet a further option is toalter the ratio of the group III components to the group V components inthe metal-organic vapor phase epitaxy. For example, it is possible toreduce the gas flow rate of NH₃ that serves to provide the nitrogencomponent (group V element).

In a further step, a second GaN semiconductor layer 7 is deposited ontothe 3D AlGaN layer 6. In the deposition of the second GaN semiconductorlayer 7, the growth conditions are again set in such a way that there istwo-dimensional layer growth. On coalescence of the GaN semiconductormaterial of the second GaN semiconductor layer 7, at least a portion 15a of the dislocations bends back in lateral direction, such that thisportion 15 a of the dislocations does not spread out further in verticaldirection in the semiconductor layer sequence. More particularly, only asmall portion 15 b of the dislocations propagates further in verticaldirection. The 3D AlGaN layer 6 disposed atop the Al(Ga)N interlayer 5thus leads advantageously to a reduction in the dislocation density inthe tension layer structure 10 and especially in the functionalsemiconductor layer sequence 14 grown on subsequently in an electronicor optoelectronic component.

The second GaN semiconductor layer 7 is preferably an undoped layer.After the growth of the second GaN semiconductor layer 7, in the workingexample, a third GaN semiconductor layer 8 is grown on, which ispreferably a doped semiconductor layer, especially an n-dopedsemiconductor layer. The third GaN semiconductor layer 8 may especiallybe a silicon-doped semiconductor layer. It is possible that the tensionlayer structure 10 also contains one or more further layers, forexample, an interlayer 9 which is grown on prior to the growth of thefunctional semiconductor layer sequence 14 of an electronic oroptoelectronic component. The interlayer 9 may, for example, be an AlGaNsemiconductor layer.

The tension layer structure 10 advantageously has compressive stresswhich, in the course of cooling of the layer sequence from the growthtemperature of more than 1000° C. to room temperature, counteracts anytensile stress generated by the growth substrate 1.

The compressive stress in the tension layer structure 10 is achievedfirstly in that the first GaN semiconductor layer 4 has been grown onthe underlying nucleation layer 2 that has a lower lattice constant thanGaN. The compressive stress built up in the first GaN semiconductorlayer 4 in this way relaxes at least slightly with increasing layerthickness during growth owing to dislocations 15 in the semiconductormaterial. As a result of the Al(Ga)N interlayer 5 having a lower latticeconstant than GaN that has been inserted between the first GaNsemiconductor layer 4 and the second GaN semiconductor layer 7, thiscompressive stress is built up again.

What is particularly advantageous about the tension layer structure 10is that not only is compressive stress built up, but a reduction indislocation density is also achieved by means of the 3D AlGaN layer 6.Preferably, a dislocation density of less than 1×10⁹ cm⁻² is achieved inthe tension layer structure 10 and/or in the subsequent functionalsemiconductor layer sequence 14 of an electronic or optoelectroniccomponent. The dislocation density is more preferably even less than5×10⁸ cm⁻².

In a next method step, the functional semiconductor layer sequence 14 ofan electronic or optoelectronic component is grown onto the tensionlayer structure 10 grown on beforehand. The functional semiconductorlayer sequence 14 of the electronic or optoelectronic component is basedon a nitride compound semiconductor.

The functional semiconductor layer sequence 14 may especially contain anactive layer 12 of an optoelectronic component. The active layer 12 mayespecially be a radiation-emitting or radiation-receiving layer. Theactive layer 12 comprises, for example, In_(x)Al_(y)Ga_(1-x-y)N with0≤x≤1, 0≤y≤1 and x+y≤1. The active layer may take the form, for example,of a pn junction, of a double heterostructure, or of a simple quantumwell structure or multiple quantum well structure. The term “quantumwell structure” encompasses any structure in which charge carriersexperience quantization of their energy states as a result ofconfinement. More particularly, the term “quantum well structure” doesnot include any statement as to the dimensionality of the quantization.It thus includes, inter alia, quantum troughs, quantum wires and quantumdots, and any combination of these structures.

In addition, the functional semiconductor layer sequence 14 contains,for example, a first semiconductor region ii and a second semiconductorregion 13, wherein the first semiconductor region 11 is n-doped, forexample, and the second semiconductor region 13 is p-doped, for example.The first semiconductor region ii and the second semiconductor region 13may each be composed of multiple component layers.

FIG. 2 shows a second working example of the semiconductor layersequence in a method of producing a nitride compound semiconductorcomponent. The second working example differs from the first workingexample in that a second 3D AlGaN layer 3 is disposed atop thenucleation layer 2. Prior to the growth of the first GaN semiconductorlayer 4, the second 3D AlGaN layer 3 is grown on in such a way that ithas nonplanar structures. As in the case of the 3D AlGaN layer 6 atopthe Al(Ga)N interlayer 5, this is effected by a suitable setting of thegrowth conditions. The second 3D AlGaN layer is especially grown on insuch a way that it has three-dimensional growth. Growth conditionssuitable for the purpose correspond to those described before inassociation with the 3D AlGaN layer. More particularly, in theproduction of the second 3D AlGaN layer 3, it is possible to set a lowergrowth temperature and/or an altered, for example lower, pressure thanin the production of the subsequent first GaN semiconductor layer 4.

The second 3D AlGaN layer 3 disposed between the nucleation layer 2 andthe first GaN semiconductor layer 4 has the particular advantage that aportion of the dislocations 15 c already bend back as the first GaNsemiconductor layer 4 grows onto the nonplanar structures and do notpropagate further in vertical direction in the tension layer structure10. In this way, a further reduction in dislocation density isadvantageously achieved.

FIG. 3 shows a further working example of the semiconductor layersequence in the method of producing a nitride compound semiconductorcomponent. The working example of FIG. 3 differs from the workingexample of FIG. 2 in that the nucleation layer 2 has been produced bysputtering. The nucleation layer 2 is preferably an AIN layer producedby sputtering. In the production by sputtering, the nucleation layer mayespecially be deposited on the growth substrate 1 in a relaxed manner.It is possible here, for example, after the deposition, to detectcolumn-shaped growth by means of atomic force microscopy or transmissionelectron microscopy. Grain boundaries are formed here, which lead to afurther reduction in defects, especially after heating up to the growthtemperature of the subsequent MOVPE process and overgrowth with thesemiconductor material of the subsequent layer. In this way, it isadvantageously possible to achieve an even lower defect density.

In one configuration of the method, a nitride compound semiconductorcomponent 20 is produced, in the form of what is called a thin-filmcomponent. In this configuration, as shown in Figure 4, a mirror layer16 is first applied on a side of the functional semiconductor layersequence 14 remote from the tension layer structure. The mirror layer 16may, for example, be a silver layer. Subsequently, the layer stack isbonded to a carrier substrate 18 on the side remote from the growthsubstrate, for example, with a bonding layer 17. The bonding layer 17may, for example, be a solder layer. Further interlayers may be presentbetween the mirror layer 16 and the solder layer 17, which are not shownhere for simplification of the diagram. Such interlayers may, forexample, be adhesion promoter layers, wetting layers or diffusionbarrier layers.

The carrier substrate 18 need advantageously not be suitable forepitaxial growth of a nitride compound semiconductor material, and maytherefore advantageously be selected using other criteria, for example,a high electrical and/or thermal conductivity. In a further method step,the growth substrate 1 is detached from the side of the layer stackremote from the carrier substrate 18. The side of the semiconductorlayer sequence facing the original growth substrate may thus preferablyserve as radiation exit surface in the finished optoelectroniccomponent. After the detachment of the growth substrate, it is possibleto remove further layers of the layer stack originally applied, such asmore particularly the nucleation layer 2 and/or at least parts of thetension layer structure 10. This can be effected, for example, by anetching process. For example, in the optoelectronic component 20 shownin FIG. 4, the growth substrate 1, the nucleation layer 2, the second 3DAlGaN layers 3, the first GaN semiconductor layer 4, the Al(Ga)Ninterlayer 5 and the 3D AlGaN layer 6 have already been removed and arethus no longer present in the finished optoelectronic component. Thesecond AlGaN layer 7 has advantageously been provided with anoutcoupling structure 19 on the interface that now serves as radiationexit surface.

A particular feature of the nitride compound semiconductor component 20produced by the method described herein is a particularly lowdislocation density, which advantageously increases the efficiency ofthe component.

The invention is not limited by the description with reference to theworking examples. Instead, the invention encompasses every new featureand every combination of features, which especially includes everycombination of features in the patent claims, even if this feature orthis combination itself is not explicitly specified in the patent claimsor working examples.

1-17. (canceled)
 18. A method of producing a nitride compound semiconductor component, the method comprising: providing a growth substrate; growing a nucleation layer of an aluminum-containing nitride compound semiconductor onto the growth substrate; growing a tension layer structure for generating a compressive stress, wherein the tension layer structure comprises at least a first GaN semiconductor layer and a second GaN semiconductor layer, and wherein an Al(Ga)N interlayer for generating the compressive stress is disposed between the first GaN semiconductor layer and the second GaN semiconductor layer; and growing a functional semiconductor layer sequence of the nitride compound semiconductor component onto the tension layer structure, wherein a growth of the second GaN semiconductor layer is preceded by a growth of a first 3D AlGaN layer on the Al(Ga)N interlayer in such a way that it has nonplanar structures.
 19. The method of claim 18, wherein the first 3D AlGaN layer is produced by metal-organic vapor phase epitaxy, and wherein a growth temperature in the growth of the first 3D AlGaN layer is less than 1000° C.
 20. The method of claim 18, wherein the first 3D AlGaN layer, the first GaN semiconductor layer and the second GaN semiconductor layer are produced by metal-organic vapor phase epitaxy, wherein NH₃ is used as reaction gas, and wherein an NH₃ gas flow rate while producing the first 3D AlGaN layer is lower than while producing the first GaN semiconductor layer and/or the second GaN semiconductor layer.
 21. The method of claim 18, wherein the first 3D AlGaN layer, the first GaN semiconductor layer and the second GaN semiconductor layer are produced by metal-organic vapor phase epitaxy in a reaction chamber, and wherein a pressure in the reaction chamber while producing the first 3D AlGaN layer is lower than while producing the first GaN semiconductor layer and/or the second GaN semiconductor layer.
 22. The method of claim 18, wherein the tension layer structure does not have a masking layer.
 23. The method of claim 18, wherein the tension layer structure does not include silicon nitride.
 24. The method of claim 18, wherein the first 3D AlGaN layer has crystal faces that are predominantly not oriented in a c plane.
 25. The method of claim 18, wherein a growth of the nucleation layer is followed and a growth of the first GaN layer is preceded by a growth of a second 3D AlGaN layer in such a way that it has nonplanar structures.
 26. The method of claim 18, wherein the nucleation layer is produced by sputtering.
 27. The method of claim 18, wherein a total thickness of the tension layer structure is less than 5 μm.
 28. The method of claim 18, wherein the second GaN semiconductor layer is undoped, and wherein the second GaN semiconductor layer is followed by a third GaN semiconductor layer which is doped.
 29. The method of claim 18, wherein the growth substrate has a silicon surface.
 30. The method of claim 29, wherein the silicon surface is a plane.
 31. The method of claim 18, wherein the nitride compound semiconductor component is an optoelectronic component.
 32. The method of claim 31, wherein the functional semiconductor layer sequence is a light-emitting diode layer sequence comprising an n-type semiconductor region, a p-type semiconductor region, and an active layer disposed between the n-type semiconductor region and the p-type semiconductor region.
 33. The method of claim 18, wherein the growth substrate is detached after a growth of the functional semiconductor layer sequence.
 34. The method of claim 18, wherein the functional semiconductor layer sequence is bonded to a carrier substrate on an opposite side from the growth substrate. 